18,924 research outputs found

    Dislocation plasticity in thin metal films

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    This article describes the current level of understanding of dislocation plasticity in thin films and small structures in which the film or structure dimension plays an important role. Experimental observations of the deformation behavior of thin films, including mechanical testing as well as electron microscopy studies, will be discussed in light of theoretical models and dislocation simulations. In particular, the potential of applying strain-gradient plasticity theory to thin-film deformation is discussed. Although the results of all studies presented follow a “smaller is stronger” trend, a clear functional dependence has not yet been established

    Mottness: Identifying the Propagating Charge Modes in doped Mott Insulators

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    High-temperature superconductivity in the copper-oxide ceramics remains an unsolved problem because we do not know what the propagating degrees of freedom are in the normal state. As a result, we do not know what are the weakly interacting degrees of freedom which pair up to form the superconducting condensate. That the electrons are not the propagating degrees of freedom in the cuprates is seen most directly from experiments that show spectral weight redistributions over all energy scales. Of course, the actual propagating degrees of freedom minimize such spectral rearrangements. This review focuses on the range of epxerimental consequences such UV-IR mixings have on the normal state of the cuprates, such as the pseudogap, mid-infrared band, temperature dependence of the Hall number, the superfluid density, and a recent theoretical advance which permits the identification of the weakly interacting degrees of freedom in a doped Mott insulator. Within this theory, we show how the wide range of phenomena which typify the normal state of the cuprates arises including T−T-linear resistivity.Comment: To appear as a Colloquium in the April issue of Rev. Mod. Phys Updated version contains new references and a clarification concerning Fig. 8

    Evidence for Ubiquitous Collimated Galactic-Scale Outflows along the Star-Forming Sequence at z~0.5

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    We present an analysis of the MgII 2796, 2803 and FeII 2586, 2600 absorption line profiles in individual spectra of 105 galaxies at 0.3<z<1.4. The galaxies, drawn from redshift surveys of the GOODS fields and the Extended Groth Strip, fully sample the range in star formation rates (SFRs) occupied by the star-forming sequence with stellar masses log M_*/M_sun > 9.5 at 0.3<z<0.7. Using the Doppler shifts of the MgII and FeII absorption lines as tracers of cool gas kinematics, we detect large-scale winds in 66+/-5% of the galaxies. HST/ACS imaging and our spectral analysis indicate that the outflow detection rate depends primarily on galaxy orientation: winds are detected in ~89% of galaxies having inclinations (i) <30 degrees (face-on), while the wind detection rate is only ~45% in objects having i>50 degrees (edge-on). Combined with the comparatively weak dependence of the wind detection rate on intrinsic galaxy properties, this suggests that biconical outflows are ubiquitous in normal, star-forming galaxies at z~0.5. We find that the wind velocity is correlated with host galaxy M_* at 3.4-sigma significance, while the equivalent width of the flow is correlated with host galaxy SFR at 3.5-sigma significance, suggesting that hosts with higher SFR may launch more material into outflows and/or generate a larger velocity spread for the absorbing clouds. Assuming that the gas is launched into dark matter halos with simple, isothermal density profiles, the wind velocities measured for the bulk of the cool material (~200-400 km/s) are sufficient to enable escape from the halo potentials only for the lowest-M_* systems in the sample. However, the outflows typically carry sufficient energy to reach distances of >50 kpc, and may therefore be a viable source of cool material for the massive circumgalactic medium observed around bright galaxies at z~0. [abridged]Comment: Submitted to ApJ. 61 pages, 25 figures, 4 tables, 4 appendices. Uses emulateapj forma

    Liana infestation impacts tree growth in a lowland tropical moist forest

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    Ecosystem-level estimates of the effect of lianas on tree growth in mature tropical forests are needed to evaluate the functional impact of lianas and their potential to affect the ability of tropical forests to sequester carbon, but these are currently lacking. Using data collected on tree growth rates, local growing conditions and liana competition in five permanent sampling plots in Amazonian Peru, we present the first ecosystem-level estimates of the effect of lianas on above-ground productivity of trees. By first constructing a multi-level linear mixed effect model to predict individual-tree diameter growth model using individual-tree growth conditions, we were able to then estimate stand-level above-ground biomass (AGB) increment in the absence of lianas. We show that lianas, mainly by competing above-ground with trees, reduce tree annual above-ground stand-level biomass increment by ~10%, equivalent to 0.51 Mg dry weight ha&lt;sup&gt;&amp;minus;1&lt;/sup&gt; yr&lt;sup&gt;&amp;minus;1&lt;/sup&gt; or 0.25 Mg C ha&lt;sup&gt;&amp;minus;1&lt;/sup&gt; yr&lt;sup&gt;&amp;minus;1&lt;/sup&gt;. AGB increment of lianas themselves was estimated to be 0.15 Mg dry weight ha&lt;sup&gt;&amp;minus;1&lt;/sup&gt; yr&lt;sup&gt;&amp;minus;1&lt;/sup&gt; or 0.07 Mg C ha&lt;sup&gt;&amp;minus;1&lt;/sup&gt; yr&lt;sup&gt;&amp;minus;1&lt;/sup&gt;, thus only compensating ~29% of the liana-induced reduction in ecosystem AGB increment. Increasing liana pressure on tropical forests will therefore not only tend to reduce their carbon storage capacity, by indirectly promoting tree species with low-density wood, but also their rate of carbon uptake, with potential consequences for the rate of increase in atmospheric carbon dioxide

    Accretion Signatures from Massive Young Stellar Objects

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    High resolution (lambda / Delta-lambda = 50,000) K-band spectra of massive, embedded, young stellar objects are presented. The present sample consists of four massive young stars located in nascent clusters powering Galactic giant H II regions. Emission in the 2.3 micron 2--0 vibrational--rotational bandhead of CO is observed. A range of velocity broadened profiles seen in three of the objects is consistent with the emission arising from a circumstellar disk seen at various inclination angles. Br gamma spectra of the same spectral and spatial resolution are also presented which support an accretion disk or torus model for massive stars. In the fourth object, Br emission suggesting a rotating torus is observed, but the CO profile is narrow, indicating that there may be different CO emission mechanisms in massive stars and this is consistent with earlier observations of the BN object and MWC 349. To--date, only young massive stars of late O or early B types have been identified with clear accretion disk signatures in such embedded clusters. Often such stars are found in the presence of other more massive stars which are revealed by their photospheric spectra but which exhibit no disk signatures. This suggests the timescale for dissipating their disks is much faster than the less massive OB stars or that the most massive stars do not form with accretion disks.Comment: 28 pages, 10 Figures, accepted for publication in the Astrophysical Journa

    Diffusion-induced Ramsey narrowing

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    A novel form of Ramsey narrowing is identified and characterized. For long-lived coherent atomic states coupled by laser fields, the diffusion of atoms in-and-out of the laser beam induces a spectral narrowing of the atomic resonance lineshape. Illustrative experiments and an intuitive analytical model are presented for this diffusion-induced Ramsey narrowing, which occurs commonly in optically-interrogated systems.Comment: 4 pages, 8 figure

    Dynamic optical bistability in resonantly enhanced Raman generation

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    We report observations of novel dynamic behavior in resonantly-enhanced stimulated Raman scattering in Rb vapor. In particular, we demonstrate a dynamic hysteresis of the Raman scattered optical field in response to changes of the drive laser field intensity and/or frequency. This effect may be described as a dynamic form of optical bistability resulting from the formation and decay of atomic coherence. We have applied this phenomenon to the realization of an all-optical switch.Comment: 4 pages, 5 figure

    Concerted changes in tropical forest structure and dynamics: evidence from 50 South American long-term plots

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    Several widespread changes in the ecology of old-growth tropical forests have recently been documented for the late twentieth century, in particular an increase in stem turnover (pan-tropical), and an increase in above-ground biomass (neotropical). Whether these changes are synchronous and whether changes in growth are also occurring is not known. We analysed stand-level changes within 50 long-term. monitoring plots from across South America spanning 1971-2002. We show that: (i) basal area (BA: sum of the cross-sectional areas of all trees in a plot) increased significantly over time (by 0.10 +/- 0.04 m(2) ha(-1) yr(-1), mean +/- 95% CI); as did both (ii) stand-level BA growth rates (sum of the increments of BA of surviving trees and BA of new trees that recruited into a plot); and (iii) stand-level BA mortality rates (sum of the cross-sectional areas of all trees that died in a plot). Similar patterns were observed on a per-stem basis: (i) stem density (number of stems per hectare; 1 hectare is 10(4) m(2)) increased significantly over time (0.94 +/- 0.63 stems ha(-1) yr(-1)); as did both (ii) stem recruitment rates; and (iii) stem mortality rates. In relative terms, the pools of BA and stem density increased by 0.38 +/- 0.15% and 0.18 +/- 0.12% yr(-1), respectively. The fluxes into and out of these pools-stand-level BA growth, stand-level BA mortality, stem recruitment and stem mortality rates-increased, in relative terms, by an order of magnitude more. The gain terms (BA growth, stem recruitment) consistently exceeded the loss terms (BA loss, stem mortality) throughout the period, suggesting that whatever process is driving these changes was already acting before the plot network was established. Large long-term increases in stand-level BA growth and simultaneous increases in stand BA and stem density imply a continent-wide increase in resource availability which is increasing net primary productivity and altering forest dynamics. Continent-wide changes in incoming solar radiation, and increases in atmospheric concentrations of CO2 and air temperatures may have increased resource supply over recent decades, thus causing accelerated growth and increased dynamism across the world's largest tract of tropical forest

    Self-doped flat band and spin-triplet superconductivity in monolayer 1T-TaSe2−x_{2-x}Tex_{x}

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    Two-dimensional van der Waals materials have become an established platform to engineer flat bands which can lead to strongly-correlated emergent phenomena. In particular, the family of Ta dichalcogenides in the 1\textit{T} phase presents a star-of-David charge density wave that creates a flat band at the Fermi level. For TaS2_2 and TaSe2_2 this flat band is at half filling leading to a magnetic insulating phase. In this work, we theoretically demonstrate that ligand substitution in the TaSe2−x_{2-x}Tex_x system produces a transition from the magnetic insulator to a non-magnetic metal in which the flat band gets doped away from half-filling. For x∈[0.846,1.231]x\in[{0.846},{1.231}] the spin-polarized flat band is self-doped and the system becomes a magnetic metal. In this regime, we show that attractive interactions promote three different spin-triplet superconducting phases as a function of xx, corresponding to a nodal f-wave and two topologically-different chiral p-wave superconducting phases. Our results establish monolayer TaSe2−x_{2-x}Tex_{x} as a promising platform for correlated flat band physics leading to unconventional superconducting states.Comment: 6 pages, 4 figures and suplemental materia

    Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas

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    Measurements of Shubnikov de Haas oscillations in the temperature range 0.3–2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V−1 s−1 at a carrier sheet density of 2.2×1011 cm−2 is limited by interface roughness and short-range interface charge scattering
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